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ZSR SERIES
2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR
DEVICE DESCRIPTION
The ZSR Series three terminal fixed positive voltage regulators feature internal circuit current limit and thermal shutdown making the devices difficult to destroy. The circuit design allows creation of any custom voltage in the range 2.85 to 12 volts. The devices are available in a small outline surface mount package, ideal for applications where space saving is important, as well as through hole TO92 style packaging. The devices are suited to local voltage regulation applications, where problems could be encountered with distributed single source regulation, as well as m ore general v oltage regulation applications. The ZSR Series show performance characteristics superior to other local voltage regulators. The initial output voltage is maintained to within 2.5% with a quiescent current of typically 350A. Output voltage change, with input voltage and load current, is much lower than competitive devices. The ZSR devices are completely stable with no external components.
FEATURES
* 2.85 to 12 Volt * Output current up to 200mA * Tight initial tolerance of 2.5% * Low 600 a quiescent current * -55 to 125C temperature range * No external components * Internal thermal shutdown * Internal short circuit current limit * Small outline SOT223 package *
TO92 package
VOLTAGE RANGE
ZSR285 ZSR300 ZSR330 ZSR400 ZSR485 ZSR500 ZSR520 ZSR600 ZSR800 ZSR900 ZSR1000 ZSR1200 2.85V 3.0V 3.3V 4.0V 4.85V 5.0V 5.2V 6.0V 8.0V 9.0V 10.0V 12.0V
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SEMICONDUCTORS
ZSR SERIES
ABSOLUTE MAXIMUM RATING
Input voltage Output Current(Io) Operating Temperature Storage Temperature 20V 200mA -55 to 125C -65 to 150C Power Dissipation (Tamb=25C) SOT223 2W(Note 3) TO92 600mW
ELECTRICAL CHARACTERISTICS Notes:
1. The maximum operating input voltage and output current of the device will be governed by the maximum power dissipation of the selected package. Maximum package power dissipation is specified at 25 C and must be linearly derated to zero at Tamb=125C. 2. The following data represents pulse test conditions with junction temperatures as indicated at the initiation of the test. Continuous operation of the devices with the stated conditions might exceed the power dissipation limits of the chosen package. 3. Maximum power dissipation for the SOT223 and SO8 packages, is calculated assuming that the device is mounted on a PCB measuring 2 inches square. 4. The shut down feature of the device operates if its temperature exceeds its design limit as might occur during external faults, short circuits etc. If the regulator is supplied from an inductive source then a large voltage transient, on the regulator input, can result should the shut down circuit operate. It is advised that a capacitor (1F or greater) should be applied across the regulator input to ensure that the maximum voltage rating of the device is not exceeded under shutdown conditions.
ZSR285 TEST CONDITIONS (Unless otherwise stated):Tj=25C, IO=100mA, Vin=6.85V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA CONDITIONS MIN. 2.78 2.736 TYP. 2.85 MAX. 2.92 2.964 2.964 10 5 2 350 40 25 600 100 100 75 48 4.85 I O =5.0mA 0.1 mV/C 62 4.55 UNITS V V V mV mV mV A A A V rms dB V
Vin =4.85 to 20V 2.736 I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =4.85 to 20V
in
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =4.85 to 20V f=10Hz to 10kHz V in =5.85 to 18V f=120Hz
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj=-55 to 125C Issue 8 - April 2006
SEMICONDUCTORS
2
ZSR SERIES
ZSR300 TEST CONDITIONS (Unless otherwise stated):T j=25C, IO=100mA, Vin=7V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA Vin =5 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current V =5 to 20V
in
CONDITIONS
MIN. 2.92 2.88 2.88
TYP. 3.0
MAX. 3.08 3.12 3.12
UNITS V V V mV mV mV A A A V rms dB V mV/C
10 5 2 350
40 25 600 100 100
I =1 to 200mA O I O =1 to 100mA
Quiescent Current Change I O =1 to 200mA V in =5 to 20V Output Noise Voltage f=10Hz to 10kHz V in =6 to 18V f=120Hz 48 5 I O =5.0mA 0.1 75 62 4.7
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
ZSR330 TEST CONDITIONS (Unless otherwise stated):T j=25C, IO=100mA, Vin=7.3V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =5.3 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current V =5.3 to 20V
in
CONDITIONS
MIN. 3.218 3.168 3.168
TYP. 3.3
MAX. 3.382 3.432 3.432
UNITS V V V mV mV mV A A A V rms dB V mV/C
7.5 5 2 350
30 25 600 100 100
I =1 to 200mA O I O =1 to 100mA
Quiescent Current Change I O =1 to 200mA V in =5.3 to 20V Output Noise Voltage f=10Hz to 10kHz V in =6.3 to 18V f=120Hz 50 5.3 I O =5.0mA 50 64 5 0.1
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj=-55 to 125C
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SEMICONDUCTORS
ZSR SERIES
ZSR400 TEST CONDITIONS (Unless otherwise stated):Tj=25C, IO=100mA, Vin=8V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA Vin =6 to 20V I O =1 to 100mA VO VO lq lq Vn Vin /VO Vin Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage Ripple Rejection Input Voltage Required To Maintain Regulation V =6 to 20V
in
CONDITIONS
MIN. 3.9 3.84 3.84
TYP. 4.0
MAX. 4.1 4.16 4.16
UNITS V V V mV mV mV A A A V rms dB V
10 5 2 350
40 25 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =6 to 20V f=10Hz to 10kHz V in =7 to 18V f=120Hz 48 6
75 62 5.3
ZSR485 TEST CONDITIONS (Unless otherwise stated): Tj=25C, IO=100mA, Vin=8.85V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =6.8 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =6.85 to 20V
in
CONDITIONS
MIN. 4.729 4.656 4.656
TYP. 4.85
MAX. 4.971 5.044 5.044
UNITS V V V mV mV mV A A A V rms dB V mV/C
10 5 2 350
40 25 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =6.85 to 20V f=10Hz to 10kHz V in =7.85 to 18V f=120Hz 50 6.85 I O =5.0mA
50 64 6.55 0.1
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj = -55 to 125C
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SEMICONDUCTORS
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ZSR SERIES
ZSR1000 TEST CONDITIONS (Unless otherwise stated): Tj=25C, IO=100mA, Vin=14V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =12 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =12 to 20V
in
CONDITIONS
MIN. 9.75 9.6 9.6
TYP. 10
MAX. 10.25 10.4 10.4
UNITS V V V mV mV mV A A A V rms dB V mV/C
12 9 3 350
40 30 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =12 to 20V f=10Hz to 10kHz V in =13 to 18V f=120Hz 43 12 I O =5.0mA
150 57 11.7 0.25
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
ZSR1200 TEST CONDITIONS (Unless otherwise stated): T j=25C, IO=100mA, Vin=16V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =14 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =14 to 20V
in
CONDITIONS
MIN. 11.7 11.52 11.52
TYP. 12
MAX. 12.3 12.48 12.48
UNITS V V V mV mV mV A A A V rms dB V mV/C
12 9 3 350
40 30 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =14 to 20V f=10Hz to 10kHz V in =15 to 18V f=120Hz 43 14 I O =5.0mA
150 57 13.7 0.25
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj = -55 to 125 C Issue 8 - April 2006 5
SEMICONDUCTORS
ZSR SERIES
ZSR285 ZSR300 ZSR400 ZSR900
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
6
ZSR285 ZSR300 ZSR400 ZSR900
TYPICAL CHARACTERISTICS
3.01 3.00 5.72
ZSR SERIES
ZSR300
5.70
Output Voltage (V)
Output Voltage (V)
2.99 2.98
5.68 5.66
Io= 5mA Vin= Vo+ 4V
Io= 5mA Vin= Vo+ 4V
4.00 3.98 3.96
2.86 2.85 2.84 2.82
ZSR285
3.94 -50 -25 0 25 50 75 100 125
ZSR400
-50 -25 0 25 50 75 100 125
Temperature (C)
Temperature (C)
Output Voltage Temperature Coefficient
9.08
Output Voltage Temperature Coefficient
450
ZSR900
Output Voltage (V)
9.04
Io= 5mA
Quiescent Current (mA)
Vin= Vo+ 4V
Io= 0 Vin=Vo+ 4V
400
9.00
350
8.96
300
8.92 -50 -25 0 25 50 75 100 125
250 -50 -25 0 25 50 75 100 125
Temperature (C)
Temperature (C)
Output Voltage Temperature Coefficient
500
Quiescent Current v Temperature
2.5
Short-Circuit Output Current (mA)
400
2.0
Io=200mA
300
Drop-Out Voltage (V)
1.5 Io=100mA 1.0
200
100
Vo=0 Vin=10V
0.5
0 -50 -25 0 25 50 75 100 125
0 -50 -25 0 25 50 75 100 125
Temperature (C)
Temperature (C)
Peak Output Current v Temperature
Drop-Out Voltage v Temperature
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SEMICONDUCTORS
ZSR SERIES
ZSR600 TEST CONDITIONS (Unless otherwise stated): T j=25C, IO=100mA, Vin=10V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =8 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =8 to 20V
in
CONDITIONS
MIN. 5.85 5.76 5.76
TYP. 6
MAX. 6.15 6.24 6.24
UNITS V V V mV mV mV A A A V rms dB V mV/C
10 7 2.5 350
40 30 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =8 to 20V f=10Hz to 10kHz V in =9 to 18V f=120Hz 48 8 I O =5.0mA
90 62 7.7 0.15
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj = -55 to 125 C
ZSR500 TEST CONDITIONS (Unless otherwise stated): T j=25C, IO=100mA, Vin=9V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =7 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =7 to 20V
in
CONDITIONS
MIN. 4.875 4.8 4.8
TYP. 5
MAX. 5.125 5.2 5.2
UNITS V V V mV mV mV A A A V rms dB V mV/C
10 5 2 350
40 25 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =7 to 20V f=10Hz to 10kHz V in =8 to 18V f=120Hz 48 7 I O =5.0mA
75 62 6.7 0.1
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
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SEMICONDUCTORS
8
ZSR SERIES
ZSR520 TEST CONDITIONS (Unless otherwise stated): T j=25C, IO=100mA,
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =7.2 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =7.2 to 20V
in
CONDITIONS
MIN. 5.070 4.99 4.99
TYP. 5.2
MAX. 5.330 5.41 5.41
UNITS V V V mV mV mV A A A V rms dB V mV/C
10 5 2 350
40 25 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =7.2 to 20V f=10Hz to 10kHz V in =8.2 to 18V f=120Hz 48 7.2 I O =5.0mA
75 62 6.9 0.1
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj = -55 to 125 C
ZSR900 TEST CONDITIONS (Unless otherwise stated): T j=25C, IO=100mA, Vin=13V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA Vin =11 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current Quiescent Current Change Output Noise Voltage V =11 to 20V
in
CONDITIONS
MIN. 8.775 8.64 8.64
TYP. 9.0
MAX. 9.225 9.36 9.36
UNITS V V V mV mV mV A A A V rms dB V mV/C
12 9 3 350
40 30 600 100 100
I =1 to 200mA O I O =1 to 100mA I O =1 to 200mA V in =11 to 20V f=10Hz to 10kHz V in =12 to 18V f=120Hz 43 11 I O =5.0mA
150 57 10.7 0.25
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj = -55 to 125C
Issue 8 - April 2006 9
SEMICONDUCTORS
ZSR SERIES
ZSR330 ZSR500 ZSR600 ZSR800 ZSR1000
TYPICAL CHARACTERISTICS
Issue 8 - April 2006
SEMICONDUCTORS
10
ZSR330 ZSR500 ZSR600 ZSR800 ZSR1000
TYPICAL CHARACTERISTICS
ZSR SERIES
4-38
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SEMICONDUCTORS
ZSR SERIES
ZSR800 TEST CONDITIONS (Unless otherwise stated): Tj=25C, IO=100mA, Vin=12V
SYMBOL PARAMETER VO Output Voltage I O =1 to 200mA V in =10 to 20V I O =1 to 100mA VO VO lq lq Vn Line Regulation Load Regulation Quiescent Current V =10 to 20V
in
CONDITIONS
MIN. 7.8 7.68 7.68
TYP. 8
MAX. 8.2 8.32 8.32
UNITS V V V mV mV mV A A A V rms dB V mV/C
11 8 3 350
40 30 600 100 100
I =1 to 200mA O I O =1 to 100mA
Quiescent Current Change I O =1 to 200mA V in =10 to 20V Output Noise Voltage f=10Hz to 10kHz V in =11 to 18V f=120Hz 44 10 I O =5.0mA 115 60 9.7 0.25
Vin /VO Ripple Rejection Vin VO /T Input Voltage Required To Maintain Regulation Average Temperature Coefficient of V O
=Tj = -55 to 125C
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SEMICONDUCTORS
12
ZSR485 ZSR520 ZSR1200
TYPICAL CHARACTERISTICS
ZSR SERIES
4-38
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SEMICONDUCTORS
ZSR SERIES
CONNECTION DIAGRAMS TO92 Package Suffix - C
IN GND OUT
SOT223 Package Suffix - G
Bottom View
Top View - Connect pin 4 to pin 2 or leave pin 4 electrically isolated
ORDERING INFORMATION
Part No ZSR C ZSR G Package TO92 SOT223 Partmark ZSR ZSR Voltage 2.85V 3.0V 3.3V 4.0V 4.85V 5.0V 5.2V 6.0V 8.0V
OPTIONS
Voltage Option 285 300 330 400 485 500 520 600 800 900 1000 1200 TO92 SOT223
3 3 3 3 3 3 3 3 3 3 3 3
3 3 3 3 3 3 3 3 3 3 3 3
Voltage Option
eg 3V device in TO92 package part number ZSR300C part marked ZSR300 * eg 12V device in SOT223 package part number ZSR1200G part marked ZSR1200 *
SOT223 is supplied on tape in 7" reels of 1000, suffix TA or 13" reels of 4000, suffix TC. Order code e.g. ZSR300GTA. TO92 is supplied loose in boxes of 4000, no suffix, or taped and wound on a reel of 1500, suffix STOB, or taped and folded in concertina form of 1500, suffix STZ.
9.0V 10.0V 12.0V
* NOTE: Exception. ZSR1000 part mark is ZSR100 for all package options
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SEMICONDUCTORS
14
ZSR SERIES
SCHEMATIC DIAGRAM
APPLICATIONS
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SEMICONDUCTORS
ZSR SERIES
TYPICAL CHARACTERISTICS
ZSR485 ZSR520 ZSR1200
4-
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SEMICONDUCTORS
16
ZSR SERIES
TYPICAL CHARACTERISTICS
(c) Zetex Semiconductors plc 2006
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
Issue 8 - April 2006 17
SEMICONDUCTORS

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